Winbond - Milestones
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Milestones

 

2014

Date Milestones
Feb./2014

Winbond passed EICC (Electronic Industry Citizenship Coalition) Code of Conduct VAP (Validate Audit Process) Audit.


2013

Date Milestones
Oct./2013

Winbond Technology Ltd,was incorporated.

Oct./2013 Winbond won the Regular Group "Gold Tower Award" & “Copper Tower Award” from the 26th Taiwan Continuous Quality Improvement Award, 2013.

2012

Date Milestones
Jan./2012

Winbond Electronics (Suzhou) Limited has been established and started operations.


2011

Date Milestones
Dec./2011 Successful verification of  DRAM product with 46nm process technology and Flash product with 58nm process technology are in mass production.
Jun./2011 Winbond Electronics (Suzhou) Limited,was incorporated.
Jun./2011 Winbond Serial Flash product is  available for the mobile phone market.
Mar./2011

Accumulated shipment of Serial Flash reached 2 billion units.

Jan./2011

Monthly shipment of Flash reached 100 million units.


2010

Date Milestones
Dec./2010

Ship first high density Parallel Flash at 90nm process

Sep./2010

128Mb Parallel Flash+32Mb PSRAM MCP received customers’ qualification

Sep./2010

Mass production of 128Mb Parallel Flash with 90nm process technology.

July /2010

Winbond was awarded  "Semiconductor Best of Class Award" from FM Global.

Mar./2010 Winbond passed BSI PAS 2050 carbon footprint certification and received the Carbon Footprint Logo from Taiwan Electrical and Electronic Manufacturers' Association. 
Mar./2010 The first 1.8V 32M Serial Flash entered the testing and verification stage.
Mar./2010 Serial Flash successfully entered the low-price mobile phone market. 
Feb./2010 Accumulated shipping volume of Serial Flash reached 1 billion units.
Feb./2010 Successful testing and verification of 256M Cellular RAM with 65nm process technology.

2009

Date Milestones
Dec./2009 Successful mass production of 1G GDDR3 with 70nm process technology
Nov./2009 Successful testing and verification of its 256M Low Power DDR SDRAM with 65nm process technology
Nov./2009 Winbond is awarded the, "2009 Outstanding Employment Unit of Defense Industry Reserve Duty System".
Nov./2009 Elpida and Winbond Formed DRAM Manufacturing Partnership.
Sept./2009 CTSP Site received the, "2008 Outstanding Performance for Energy-Saving Award" from the Bureau of Energy, Ministry of Economic Affairs. 
Sept./2009 Successful testing and verification of its first 128M DDR2 with 65nm process technology
Aug./2009 Winbond and Insolvency Administrator of Qimonda AG entered a product transfer and technology licensing agreement for Graphic DRAM.
July/2009 Winbond signed a NT$ 3.7 billion syndicated loan agreement with 9 Domestic Banks.
Feb./2009 Successful mass production of the first 16Mb Serial Flash with 90nm process technology at 300mm wafer fab in Taiwan

2008

Date Milestones
Dec./2008 Winbond received "The 2008 Outstanding Performance for Fabrication Planting Award" from the Central Taiwan Science Park Administration.
Dec./2008 Winbond successfully developed 90nm Winstack NOR FLASH.
Nov./2008 Winbond received "The 2008 Outstanding Performance for Water Conservation Award" from the Water Resources Bureau, MOEA.
Oct./2008 Winbond Headquarters address has been changed from Hsinchu Science Industry Park to Central Taiwan Science Park.
Jun./2008 Winbond signed a NT$ 7.7 billion syndicated loan agreement with 11 domestic banks.
Apr./2008 Winbond regular shareholders’ meeting approved the carve-out of its Logic IC Business named Nuvoton Technology Corporation.
Apr./2008 Winbond and Qimonda AG announced new agreement for 65 nanometer Buried Wordline technology transfer.

2007

Date Milestones
Nov/2007 Winbond is awardwed "2007 The Efficiency to operate  Pre-dispose of Sewerage System in CTSP Execllent Award" by the Central Taiwan Science Park (CTSP).
Nov/2007 Winbond is awardwed "2007 Eco – Technology Conference paper first prize " by the Industrial Development Bureau Ministry of Economic Affairs.
Nov/2007 Winbond is awardwed “Green House Gases Voluntary Reduction Award” by Industrial Development Bureau of the Ministry of Economic Affairs.
Sep/2007 Winbond signed a NT$ 5 billion syndicated loan agreement with 8 domestic banks.
Aug/2007 Winbond obtained 2-year renewal of SONY Green Partner (GP) certification.
Jun/2007 Winbond CTSP Site passed ISO 14000 and OHSAS 18000 certification.
Jun/2007 Winbond passed BSI’s (British Standards Institution) certification on Greenhouse Gases Emissions Verification.
Jun/2007 Volume production of T80 had started.
Jun/2007 Winbond and Qimonda AG announced a New Agreement for 75nm and 58nm technology transfer.
Apr/2007 Winbond received "the Outstanding Performance for Dangerous Chemical Examination
And Data Establishment Award" from the Central Taiwan Science Park (CTSP).
Mar/2007 Winbond introduced industry’s first 64M DDR KGD and successfully led into market.
Mar/2007 Winbond receviced Friendly Workplace Certification from Council of Labor Affairs.
Mar/2007 Winbond sold 200mm fab to VIS.

2006

Date Milestones
Dec/2006 Winbond acquired land and will build R&D building close to the High-Speed Rail ChuPei Station.
Dec/2006 Winbond won the "Copper Tower Award" from the 19th National Quality Control Circle Competition.
Nov/2006 Winbond Invested USD 15.7 Million to Emerging Memory & Logic Solution, Inc.
Aug/2006 Winbond Electronics Corporation and Qimonda AG Signed A New Agreement for Technology Transfer.
Aug/2006 Winbond adjusted its corporate culture to Accountability, Innovation, and Teamwork. The slogan has been adjusted to We deliver.
Jun/2006 Fab 6 received the highest award of AIG triple star status for risk management assessment and Fab 4 has earned the same prestigious award two years in a row.
May/2006 Winbond issued USD 120 million euro-convertible bond with a zero percent coupon and a conversion premium of twenty-five percent.
Apr/2006 Winbond held the grand opening ceremony for its 12-inch fabrication plant at Central Taiwan Science Park.
Jan/2006 Winbond sold its FPD (Flat Panel Display) business to Cheertek Technology Inc.

2005

Date Milestones
Dec/2005 Winbond received, "The 2005 Outstanding Performance for Water Conservation Award" from the Water Resources Bureau, MOEA.
Oct/2005 Winbond was awarded the, " 2005 Outstanding Atmosphere Protection Award" by the Association of Atmosphere Protection in Taiwan (AAPT).
Oct/2005 Winbond Electronics Corporation signed a NT$ 15 Billion Syndicated Loan.
Sep/2005 The 12-inch fab in the Central Taiwan Science Park entered into mass production stage.
Jul/2005 Winbond Injected USD 20 Million Capital to WEC Investment Holding Ltd.
Jun/2005 Winbond signed a four-year syndicated loan agreement in the amount of US$ 70 million.
Jun/2005 Winbond acquired NexFlash Technology.
Jun/2005 The Board of Directors of Winbond created two new positions of Chief Executive Officer (CEO) and Deputy Chief Executive Officer.
Jun/2005 Clean room of Fab 6 was ready and the equipments have moved in..
May/2005 Fab 4 Fully achieved the AIG Triple Star Status.
May/2005 Successful mass production of first single-chip Multimedia A/V Processor IC with 0.13-micron process technology in Taiwan.
Apr/2005 Winbond acquired the Advanced PC Business Division from National Semiconductor.
Jan/2005 Winbond signed a five-year syndicated loan agreement in the amount of NT$ 8 billion.
Jan/2005 Fab 6 won the prestigious, “2004 Environmental protection & Safety in Construction Award” from the Central Taiwan Science Park.

2004

Date Milestones
Dev/2004 Winbond held the Upper beam placement ceremony for the 12 inch fabrication plant at Central Taiwan Science Park.
Dec/2004 As a research of "Fluorine-ion Reduction from the Neutralizing System", Winbond won the Honorable Mention in 2004 Semiconductor and Opto-electronics Facility Seminar.
Sep/2004 Winbond won the "Silver Tower Award" from the 17th National Quality Control Circle Competition.
Jul/2004 Winbond held the ground breaking ceremony for the 12 inch fabrication plant at Central Taiwan Science Park.

2003

Date Milestones
Dev/2003 Winbond wins the prestigious, “2002 Science Industrial Park Research & Development Award”.  
Nov/2003 Fab4 earned the prestigious, "2002 National Labor Safety and Award", two years in a row.
Oct/2003 Fab 2 is awarded the highest honor, "Outstanding Environmental Protection Award" issued by the Environmental Protection Administration, three years in a row.
Oct/2003 Fab 2 earned the prestigious, "2002 Science Industrial Park Labor Safety Award".
Jun/2003 Winbond announces successful results for mass production of its 0.13-micron 32Mb WinStack Flash products.
Jun/2003 Winbond establishes a new technology R&D group composed of three centers: Memory Technology Center, Emerging Technology Center and Novel Device Structure Center.
May/2003 Winbond introduces a supply chain integrated supply chain system, " SWORD" Satisfaction of Winbond Order Response & Delivery to enhance the quality of customer service and flexibility of production.

2002

Date Milestones
Nov/2002 Fab 2 is awarded the, "Outstanding Environmental Protection Award" issued by the Environmental Protection Administration two years in a row.
Oct/2002 Fab 2 received, "The Best Performance for Waste Minimization Factory Award". 
Oct/2002 Fab4 earned the prestigious, "2001 National Labor Safety and Award".
Oct/2002 Received the National Invention Award from The Intellectual Property Office of MOEA.
Oct/2002 Captured the gold medal in the category of "High density CMP waste water Recycling" for MOEA's 15th Annual Activities competition. 
Sep/2002 Introduced the industry's first non-volatile potentiometer chip featuring selectable output buffer.
Aug/2002 The Company announces the successful results of testing, along with excellent  yield rates, for its 0.18-Micron, 32M WinStack Flash technology program.
Jun/2002 Fab1, a 5-inch facility, is formally retired.  The Fab was the Company’s very first fab facility.
Jun/2002 Winbond Electronics Shanghai Ltd., is honored as, “ Foreign Investment Enterprise for Advanced Technology" by the Shanghai Foreign Investment Commission and the Shanghai Foreign Economic Relations & Trade Commission.
May/2002 Winbond Electronics Corporation signs strategic alliance with Infineon Technologies AG for joint development of 0.11-Micron DRAM technology. 
Mar/2002 The Company exhibits its innovative and environmentally advanced ultra pure water system and recycling system, sponsored by SIPA. 
Jan/2002 Open house held for Winbond’s technology building. 

2001

Date Milestones
Dec/2001 The company achieves DNV OHSAS 18001 certification.
Dec/2001 WECA achieved QS-9000 certification.
Dec/2001 The Company announces the results of successful testing and excellent yield rates for its 0.13-micron 512M SDRAM/DDR ICs.
Nev/2001 China’s Shanghai Information Office classifies Winbond Electronics Shanghai Ltd., as a, “IC Design Company”.
Nev/2001 Winbond and Sharp Corporation establish a joint development program for Advanced Contactless Technology Flash.
Oct/2001 WECA launched the WTS701, the industry's first true text-to-speech single chip processor.
Oct/2001 Fab 4 earned the prestigious, "2001 Science Industrial Park Labor Safety Award", two years in a row .
Oct/2001 Winbond receives the, "The Best Performance for Waste Minimization Award" hosted by the Industrial Development Bureau, MOEA.
Oct/2001 Fab 2 received,  "The Best Performance of Waste Minimization Factory Award" hosted by the Industrial Development Bureau, MOEA.  The award follows the same honor given to Fab 4.
Oct/2001 Fab 4 is awarded the, "Outstanding Environmental Protection Award" issued by the Environmental Protection Administration.  The award follows the same honor given to Fab 4.
Oct/2001 Winbond captures a gold medal in the productioncategory for MOEA's 14th annual Group Activities competition.
Oct/2001 Winbond establishes a new company,  "Cheertek Incorporation" dedicated to multimedia IC development.
Sep/2001 Winbond establishes a representative’s office in Shenzhen, China.
Jul/2001 Winbond licenses Mobile-Fast Cycle Random Access Memory technology from Fujitsu Limited.
Jun/2001 The Company’s Knowledge Management Center holds its first, "Best Practice Competition". More than 70 participants from the Company’s product design and fabrication component groups competed for two Golden, three Silver, four Bronze and seven Excellence in Work awards, with prizes worth a total of NT $590,000.
Jun/2001 The Company achieves new patent milestone; exceeding more than 1000 patents held worldwide.
May/2001 The Corporation earns the, "Total Productive Maintenance (TPM)" award hosted by the Industrial Development Bureau of Ministry and Economic Affairs.
May/2001 Winbond receives Golden Award from the Council for Cultural Affairs.
May/2001 The company introduces a new series of Double Data-Rate 256M DRAM Chips.
Apr/2001 Winbond receives, "The Outstanding Performance for Water Conservation Award" from the Water Resources Bureau, MOEA. 
Apr/2001 Winbond cooperates with Center for Environmental, Safety and Health Technology Development, ITRI, to develop an innovative air pollution control process for eliminating volatile organic compounds in exhaust. The process, a combination of ozone oxidation and a wet scrubber, is part of a project sponsored by HsinChu Science-Cased Industrial Park for innovative high-tech R&D projects  ductor.
Mar/2001 The Company’s wholly-owned subsidiary, "ISD Israel Ltd." changes its name to "Winbond Electronics Corporation Israel Ltd.." 
Mar/2001 Winbond Electronics Shanghai Ltd., is established. 
Jan/2001 Winbond Electronics Corporation Japan, is established.
Jan/2001 The Company signs a Letter of Intent for investing in NexFlash Technologies, Inc. 

2000

Date Milestones
Dec/2000 Winbond wins the prestigious, “2000 Science Industrial Park Research & Development Award”.
Nov/2000 The first computer integrated manufacturing system for Fab 5 is completed.
Nov/2000 The Company hosts its first sports meet and recreational fair.
Oct/2000 Winbond Electronics Hong Kong (WEHK) and WECA successfully launches a financial and accounting system, “SAP/R3 FI and CO”.
Sep/2000 The Company successfully launches a new performance evaluation data system, “KPI+BW”.
Aug/2000 Winbond Electronics Corporation America (WECA) successfully launches a series of new 8-bit micro controllers, the W78LE58 and W78LE516 in the United States and Europe.
Jul/2000 The Corporation successfully launches a new financial and accounting system, "SAP/R3 FI and CO”.
Jul/2000 Winbond ships the world’s first single chip ISDN S/T controller for USB TA applications.
Jul/2000 The Company’s speech recognition Winbond SimonTM chip solution “SR3000” wins L’ECTRON D’OR 2000, product of the year award.
Jun/2000 Tsuyoshi Kawanishi is named as the Company’s newest board member.
Jun/2000 The Corporation establishes a new, "Fab Automation & Facility Engineering Center". The new center is a strategic part of the Company's new 12-inch Fab program and is tasked with integrating automation and project management.
Jun/2000 Winbond establishes a new, "Quality & SHE Center" (Quality and Reliability Assurance, Safety, Health & Environment Center").
Jun/2000 Winbond establishes a new, "Knowledge Management Center" to address new global economic business issues and to enhance management of its extensive intellectual property.
May/2000 Winbond obtains 5.1 channel 20 bit AC-3 certification from Dolby Laboratories Licensing Corporation for its W9922QF DVD decoder.
May/2000 Winbond signs a joint technology agreement with Fujitsu and Toshiba. The three companies will develop advanced 0.13-micron DRAM manufacturing processes as well as further develop a new generation of 0.11-micron DRAM manufacturing technology.
Apr/2000 Winbond signs a cooperative technology development agreement with Toshiba for developing 0.13-micron trench DRAM technology.
Mar/2000 The Company's Business Group 1 achieves QS 9000 certification.

1999

Date Milestones
Dec/1999 Attained record-breaking annual revenues with a new high of NT $31 billion.
Dec/1999 Achieved record-high sales revenues for a single month from Japan in the amount of NT $200 million.
Dec/1999 Won the prestigious, "1999 Science Industrial Park Research & Development Award."
Dec/1999 Successfully introduced Taiwan's first 0.175Micron process technology for 256Mb DRAM products.
Nov/1999 Successfully launched a new automatic material handling system for Fab 4 and Fab 5.
Nov/1999 Received award for, "The Best Performing Electronics Corporation" in the, "1999 Outstanding Electronic Component Suppliers Contest". Winbond wins first place in product innovation, product quality, service quality, best performance and second place in the corporate image category.
Oct/1999 Granted the Company's 500th patent .
Sep/1999 Commenced rapid recovery operation through collaborative company-wide efforts after being struck by a powerful earthquake.
Aug/1999 Signed a technology and licensing agreement with Vivid Semiconductor regarding TFT-LCD driver and controller IC.
Jun/1999 Become gold medal winner of the 8th R.O.C. Patent Award.
Apr/1999 Successfully acquired  the  TFT LCD driver  of Cirrus Logic.
Mar/1999 Toshiba technical alliance in 0.175 and 0.15 micron DRAM process technologies.
Mar/1999 Entered 1998 Top 300 companies list for granted patents at  U.S. Patent Office.
Jan/1999 Rambus Technical license and sampled  1.6 GB/sec memory devices in Q3 1999.

1998

Date Milestones
Dec/1998 Dr. Ding-Yuan Yang promoted as vice chairman and Dr.Ching-Chu Chang become president.
Dec/1998 Received Science Park R&D Investment Award.
Dec/1998 Patents certificate reached 350 worldwide.
Dec/1998 FAB 1 and FAB 2 passed ISO 14001 certification.
Dec/0998 Acquired Information Storage Devices, Inc. (ISD), supplier of advanced voice IC and flash memory product.
Dec/1998 Awarded by the Hsinchu County for outstanding performance of foreign laborer management.
Dec/1998 0.25 micron SDRAMs passed Toshiba qualification.
Nov/1998 200 million shares capital rise for Global Depositary Receipts (GDR).
Nov/1998 Added SMSC as representative in North America and Europe market.
Nov/1998 W9926QF Super VCD Chipset in compliance with Mainland China national standard.
Oct/1998 Joint-development of CHISEL technology with Lucent.
Oct/1998 64M DRAMs of 0. 25 micron process technology commercial run complete.
Sep/1998 Rambus technology transfer.
Jul/1998 64M DRAMs of 0. 35 micron process technology commercial run complete.
Jun/1998 Started the distributive education plan and donation of advanced manufacturing equipment for R&D with National Tsing-Hua University.
Jun/1998 Invested in Walton Advanced Electronics Ltd.
Jun/1998 Vice President Lien- Chan hosted the open house ceremony for FAB 4.
Jun/1998 Welfare committee won" 1998 Enterprise Welfare Innovation Award."
Jun/1998 Winbond Newsletter awarded "the 1998 Outstanding Employee's periodical of Taiwan.
Jun/1998 The first EPROM product with 0.5 micron N.V.M. technology process introduction
Jun/1998 0.5 micron Mixed -Mode process technology transferred to Worldwide Semiconductor Manufacturing Corporation.
Jun/1998 FAB 2 achieved the honor as the" One-Year Exemption Protection Program" by the Council of Labor Affairs of the Executive Yuan.
May/1998 64M DRAMs of 0. 25 micron process technology pilot run complete.
May/1998 DRAMs were first qualified by domestic notebook companies.
May/1998 0.4 micron Flat Cell Speech IC introduction.
May/1998 0.4 micron Logic MPEG chip introduction.
Apr/1998 Issued a NTD 6 billion domestic convertible bond.
Arp/1998 Introducing 0.6-micron Embedded Flash Speech IC.
Mar/1998 FAB 3 clean up project complete, FAB 5 project began.

1997

Date Milestones
Nov/1997 FAB 4 began Toshiba transferred 64M DRAMs pilot run with satisfactory yield and world claim quality.
Nov/1997 FAB 2 received award for "the Achievement of 1997 Pollution Prevention Equipment Operation and Maintenance" by the Industrial Development Bureau ministry of Economic Affairs.
Nov/1997 Successfully issued 5 -year USD 100 million dual-tranche Euro-convertible bonds at NTD 49.12 per share.
Oct/1997 Toshiba strategic alliance for 0.25 micron Embedded DRAMs.
Oct/1997 FAB 1 achieved Two-Year Protection Program exemption issued by the Council of Labor Affairs of the Executive Yuan.
Oct/1997 Launched IEF system to integrate Extranet-Internet-Intranet.
Aug/1997 Launched DAM,DMS on-line services toward paperless document control.
Jul/1997 Become the second largest SRAMs supplier of Compaq Computer, 2Q 1997.
Jun/1997 Successfully developed advanced 0.4 micron 4T SRAMs and increased gross die of 2M SRAMs by 30%.
Jun/1997 Introducing 0.6 micron Digital Embedded Flash Memory, alliance with Information Storage Devices, Inc. (ISD) to produce voice recording IC.
Jun/1997 Awarded by the Ministry of Economic Affairs for the outstanding performance of IP management.
May/1997 Introducing 0.35 micron logic MPEG.
May/1997 Received Silver National Award of Excellence of '97 for W9960 Video Processing Chipset.
Apr/1997 FAB2 achieved "A Grade" of Pollution Prevention Voluntary Audit by the Environmental Protection Bureau of Hsinchu.

1996

Date Milestones
Dec/1996 Awarded by the Executive Yuan as the "1996 Outstanding Private Enterprise Providing Good Working Environment.
Dec/1996 W9925PF MPEG-1Video, Audio and System Decoder winning the "1996 Science Industrial Park Product Creativity Award."
Nov/1996 Acquiring ROC circuit deployment right #00001.
Nov/1996 Introducing multiprotocol video processor.
Oct/1996 FAB III suffered fire loss.
Oct/1996 Winning "1996 Science Industrial Park Research & Development Award."
Aug/1996 Signing 0.35 micron 64M DRAM technology transfer agreement with Toshiba.
May/1996 Providing OEM service for SGS-Thomson, the first OEM business client in Europe.
May/1996 Introducing 0.4 micron SRAMs.
May/1996 Upper beam placement ceremony for FAB III.
Apr/1996 Winbond Family & Housing Project breaking ground.
Mar/1996 Issuance of overseas convertible corporate bond at USD 200 million.
Feb/1996 Winning "Outstanding Environmental Protection Enterprise Award" issued by Hsinchu County Government.
Feb/1996 Winning "Outstanding Industrial Technology Development Award" issued by the Technical Development Department, MOEA.
Feb/1996 Acquiring loan agreement for FAB III at NTD14 billion.

1995

Date Milestones
Dec/1995 Licensing agreement with the Toshiba Corporation to design and produce 16 M DRAMs and new-generation high-speed SRAMs.
Dec/1995 W9920SF MPEG-1 Video Scaling Decoder garnered Science Park's1995 Innovative Product Award.
Dec/1995 Earned 1995 Science Park R & D Investment Award.
Oct/1995 Captured gold medal in production category in the MOEA's 8th Group Activities competition.
Oct/1995 Successfully completed initial public offering of Winbond stock.
Jun/1995 Developed 0.45 micron process technology.
Jun/1995 Began construction of Fab III.
Apr/1995 Commended by R.O.C.. Labor Commission for outstanding labor-management relations.
Apr/1995 Commended by National Industry Association for outstanding performance in energy conservation.
Mar/1995 MPEG image decoder chip set captured Gold National Award of Excellence.
Mar/1995 Received 1995 Gold Trade Award.

1994

Date Milestones
Dec/1994 Received Science Park's 1994 R & D Investment Award.
Dec/1994 MPEG image decoder IC and 32-bit PA-RISC microprocessor both earned Science Park Innovative Product awards.
Dec/1994 Received award for outstanding performance in development of industrial technology.
Nov/1994 Commended by National Business Association for outstanding performance in professional training.
Nov/1994 Commended by National Industry Association for outstanding performance in development and training of human resources.
Aug/1994 Fab II began production of 0.5 micron high-speed SRAMs.
Apr/1994 Commended by MOEA for outstanding performance in energy conservation.
Apr/1994 Developed 32-bit PA-RISC microprocessor.
Mar/1994 Introducing Asia's first MPEG chip.
Mar/1994 Developed 0.5 VLSI circuit process technology.
Mar/1994 Developed Asia's first single-chip MPEG image decoder IC.

1993

Date Milestones
Dec/1993 Power Speech intelligent speech synthesis IC earned Science Park Innovative Product Award.
Dec/1993 Received Science Park R&D Investment Award.
Nov/1993 Commended by National Industry Association and MOEA for outstanding performance in pollution prevention.
Nov/1993 Introducing Power Speech.
Jun/1993 Winbond Newsletter awarded "the 1993 Outstanding Employee's periodical of Taiwan.
Jun/1993 Captured silver medal in National Invention Awards.
Jun/1993 Received ISO9002 certification.
May/1993 Awarded by the Executive Yuan as the "1993 Outstanding Private Enterprise Providing Good Working Environment.
Apr/1993 Developed 0.6 micron high-speed SRAMs.
Mar/1993 Received IECQ quality certification.

1992

Date Milestones
Dec/1992 Power Speech intelligent speech synthesis IC earned Science Park Innovative Product Award.
Dec/1992 WINBUS 80486 DX / SX Chip Set received Science Park Innovative Product Award.
Sep/1992 Commenced operations at Fab II.
Sep/1992 Developed 0.8 micron high-speed SRAMs.
Jul/1992 HP PA- RISC cooperation.
Jun/1992 Winbond Newsletter awarded "the 1992 Outstanding Employee's periodical of Taiwan."
Jun/1992 Commended by R.O.C.. Labor Commission for outstanding performance in labor training.
Jun/1992 Introducing Winbus chipsets.
Feb/1992 Developed 1 micron 12 ns BiCMOS SRAM.

1991

Date Milestones
Dec/1991 Received Science Park R&D Investment Award.
Oct/1991 12ns BiCMOS 64K High-speed SRAM earned Outstanding Product Award from National Industry Association and Ministry of Economic Affairs (MOEA).
Sep/1991 Introducing Taiwan's first portable SCSI Card.
Jul/1991 Developed Taiwan's first 1.2 micron standard cell automated design system.
Jun/1991 Winning " 1991 Outstanding Enterprise Welfare Award."
Apr/1991 Developed Taiwan's first high-speed (110 MHz) RAMDAC IC.
Mar/1991 Co-developed one micron CMOS 386SX, 386DX and 486DX chipsets with Symphony.
Jan/1991 Joint development project on ISDN U-Transceiver with ERSO.
Jan/1991 Developed 12 ns BiCMOS 64K high-speed SRAM.

1990

Date Milestones
Mar/1990 Winbond Electronics North America established.
Mar/1990 Winbond Electronics (Hong Kong) established.

1989

Date Milestones
Dec/1989 LCD Dialer IC received Science Park Innovative Product Award.
Nov/1989 Introducing the first LCD dialer IC.
Oct/1989 Began construction of Fab II.
Aug/1989 Developed 1.2 micron 1M ROM.
Jun/1989 Introducing the first voice IC.
Mar/1989 Developed MGA Display Controller.

1988

Date Milestones
Oct/1988 Fab I produced first wafer.
Oct/1988 Commenced operations at Fab I.

1987

Date Milestones
Dec/1987 Developed first clock IC.
Nov/1987 Began construction of Fab I.