Winbond - DDR SDRAM
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DDR SDRAM

DDR SDRAM or double-data-rate synchronous dynamic random access memory is a type of memory used in computers and consumer electronics. It achieves greater bandwidth than the preceding single-data-rate SDRAM by transferring data on both the rising and falling edges of the clock signal.

64Mb DDR

Part No. Organization Voltage Speed Grade Package Status* RoHS  Purchase 

4Mbitx16

4 Banks

2.6V±0.1V

-4

250 MHz

CL3/CL4

Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant

NRFND

Y

  

2.5V±0.2V

-5/-5I

200 MHz

CL3

-6/-6I

166 MHz

CL2.5

W9464G6JH

4Mbitx16

4 Banks

2.4V~2.7V

-4

250 MHz

CL3/CL4

 Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant

P

Y

  

2.5V±0.2V

-5/-5I

200 MHz

CL3

* Status: P= Mass Production、S(Time)=Samples(Ready Time)、UD (Time)= Under Development(Ready Time)、NRFND=Not Recommended For New Design、EOL=End of life.

128Mb DDR

Part No. Organization Voltage Speed Grade Package Status* RoHS Purchase
W9412G6IH 8Mbitx16 4 Banks

2.5V ±0.1V

-4

250 MHz

CL3/CL4

Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant

NRFND Y  

2.5V±0.2V

-5/-5I

200 MHz

CL3

-6/-6I

166 MHz

CL2.5

W9412G6JH 8Mbitx16 4 Banks

2.4V~2.7V

-4

250 MHz

CL3/CL4

Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant

P Y  

2.5V±0.2V

-5/-5I/-5K

200 MHz

CL3

-6I

W9412G6JB 8Mbitx16 4 Banks

2.4V~2.7V

-4

250 MHz

CL3/CL4

Packaged in 60 Ball(8x13mm2)TFBGA, using Lead free materials with RoHS compliant

P Y   
2.5V±0.2V

-5/-5I

200 MHz

CL3

 W9412G2IB 4Mbitx32 4 Banks

2.5V ±0.1V

-4

250 MHz

CL3/CL4

Packaged in 144L LFBGA, using Lead free materials with RoHS compliant

NRFND Y  

2.5V±0.2V

-5/-5I

200 MHz

CL3

-6/-6I

166 MHz

CL2.5

* Status: P= Mass Production、S(Time)=Samples(Ready Time)、UD (Time)= Under Development(Ready Time)、NRFND=Not Recommended For New Design、EOL=End of life.

256Mb DDR

Part No. Organization Voltage Speed Grade Package Status* RoHS  Purchase 

W9425G6EH

16Mbitx16

4 Banks

2.6V ±0.1V

-4 

250 MHz

CL3

Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant

NRFND
Y
  
2.5V ±0.2V

-5/-5I

200 MHz

-6/-6I

166 MHz

CL2.5

W9425G6JH

16Mbitx16

4 Banks

2.4V~2.7V

-4

250 MHz

CL3/CL4

Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant

P
Y
  
2.5V ±0.2V

-5/-5I/-5A

200 MHz

CL3



W9425G6JB

 

16Mbitx16

4 Banks

2.5V ±0.2V

-5/-5I

200MHz

CL3

Packaged in 60 Ball TFBGA, using lead free materials with RoHS compliant

P
Y
  

32Mbitx8

4 Banks

2.5V±0.2V

-5

200 MHz

CL3

 Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant

EOL

Y

  

* Status: P= Mass Production、S(Time)=Samples(Ready Time)、UD (Time)= Under Development(Ready Time)、NRFND=Not Recommended For New Design、EOL=End of life.

Contact us:  SDRAM@winbond.com