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SDRAM

Synchronous DRAM is designed to process data at the same clock speed as the CPU. Therefore, synchronous DRAM is regarded as the core component that is used in high speed processing of large volumes of data. Currently, its usage is expanding to various consumer electronics such as DTV, DSC, HDD and STB.

16Mb SDRAM
Part No. Organization Voltage Speed Grade Package Status* RoHS  Purchase 
W9816G6IB 1Mbit x16  2 Banks

3.3V±0.3V

-6/
-6I

166 MHz

CL3

Packaged in VFBGA 60 balls pitch=0.65mm, using Lead free materials with RoHS compliant

 P Y  

2.7V~3.6V

-7

143 MHz

W9816G6IH 1Mbit x16 2 Banks

3.3V±0.3V

-5

143 MHz

CL2

 Package in 50-pin, 400 mil TSOP II, using Lead free materials with RoHS compliant P Y  

200 MHz

CL3

3.3V±0.3V

-6/-6I/
-6A

166 MHz

2.7V~3.6V

-7/-7I

143 MHz

* Status: P= Mass Production、S(Time)=Samples(Ready Time)、UD (Time)= Under Development(Ready Time)、NRFND=Not Recommended For New Design、EOL=End of life.

64Mb SDRAM

Part No. Organization Voltage Speed Grade Package Status* RoHS Purchase  
W9864G2IB

2Mbit x32

 4 Banks 3.3V±0.3V -6 166 MHz CL3

Packaged in TFBGA 90 ball(8x13mm²  ), using Lead free materials with RoHS compliant

 P Y  
2.7V~3.6V -7 143 MHz
W9864G2IH 2Mbit x32 4 Banks 3.3V±0.3V -5 200 MHz CL3

Packaged in TSOP II 86-pin, using Lead free materials with RoHS compliant

 P Y  
-6/-6I/
-6A		 166 MHz
2.7V~3.6V -7 143 MHz
W9864G2JH 2Mbit x32 4 Banks 3.3V±0.3V -5 200 MHz CL3

Packaged in TSOP II 86-pin, using Lead free materials with RoHS compliant

 P Y  
-6/-6I/
-6A		 166 MHz
2.7V~3.6V -7 143 MHz
W9864G6IH 4Mbit x16 4 Banks 3.3V±0.3V -5 200 MHz CL3 Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant NRFND Y  
-6/-6I/
-6A		 166 MHz
2.7V~3.6V -7/-7S 143 MHz
W9864G6JH 4Mbit x16 4 Banks 3.3V±0.3V -5

200 MHz

CL3 Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant P Y  
-6/-6I/
-6A		 166 MHz
2.7V~3.6V -7/-7S 143 MHz
W9864G6JB 4Mbit x16 4 Banks 3.3V±0.3V -6/-6I/-6A

166 MHz

CL3 Packaged in VFBGA 60 balls, using Lead free materials with RoHS compliant P Y  
2.7V~3.6V -7 143 MHz
W9864G6JT 4Mbit x16 4 Banks 3.3V±0.3V -6/-6I/
-6A/-6K

166 MHz

CL3 Packaged in TFBGA 54 balls, using Lead free materials with RoHS compliant P Y  

* Status: P= Mass Production、S(Time)=Samples(Ready Time)、UD (Time)= Under Development(Ready Time)、NRFND=Not Recommended For New Design、EOL=End of life.

128Mb SDRAM

Part No. Organization Voltage Speed Grade Package Status* RoHS  Purchase 
W9812G2IH 4Mbit x32  4 Banks 3.3V±0.3V

-6C

166 MHz

 CL3

Packaged in TSOP II 86-pin, using Lead free materials with RoHS compliant

 NRFND Y  
2.7V~3.6V

-6/-6I/
-6A

-75

133 MHz

W9812G2IB 4Mbit x32 4 Banks 2.7V~3.6V

-6/-6I/
-6A

166 MHz

 CL3

Packaged in TFBGA 90 Ball(8x13mm² ), using Lead free materials with RoHS compliant

 NRFND Y  

-75

133 MHz

W9812G6IH 8Mbit x16 4 Banks 3.3V±0.3V

-5

200 MHz

 CL3

TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant

 NRFND Y  

-6/-6C/-6I/
-6A

166 MHz

-75

133 MHz

W9812G6JH 8Mbit x16 4 Banks 3.3V±0.3V

-5

200 MHz

 CL3

TSOP II 54-pin, 400 mil using Lead free with RoHS compliant

 P Y  

-6/-6I/
-6A

166 MHz

-75

133 MHz

W9812G6JB 8Mbit x16 4 Banks

3.3V±0.3V

-6/-6I

166 MHz

 CL3

Packaged in TFBGA 54 Ball(8x8mm² ), using Lead free materials with RoHS compliant

 P Y  

-75/75I

133 MHz

 * Status: P= Mass Production、S(Time)=Samples(Ready Time)、UD (Time)= Under Development(Ready Time)、NRFND=Not Recommended For New Design、EOL=End of life.

256Mb SDRAM

Part No. Organization Voltage Speed Grade Package Status* RoHS  Purchase 
W9825G2JB 8Mbit x32 4 Banks 3.3V±0.3V

-6

166 MHz

 CL3

90 Balls TFBGA, using Lead free materials with ROHS compliant

 P Y  
2.7V~3.6V  

-6I

-75/75I

133 MHz

W9825G6EH 16Mbit x16 4 Banks

3.3V±0.3V

-5

200MHz

 CL3 Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant NRFND Y  

-6/-6I/-6A

166 MHz

-6

133 MHz

CL2

-75/75I/75A

 CL3
W9825G6JH 16Mbit x16 4 Banks

3.3V±0.3V

-5

200MHz

 CL3 Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant P Y  

-6/-6I/-6L/
-6A

166 MHz

-6

133 MHz

CL2

-75/75L

 CL3
W9825G6JB 16Mbit x16 4 Banks

3.3V±0.3V

-6/-6I/
-6A/-6K

166MHz

 CL3 Packaged in TFBGA 54 Ball(8x8mm²), using Lead free materials with RoHS compliant P Y  

133 MHz

-75

 * Status: P= Mass Production、S(Time)=Samples(Ready Time)、UD (Time)= Under Development(Ready Time)、NRFND=Not Recommended For New Design、EOL=End of life.

Contact us:  SDRAM@winbond.com